Download High-k Gate Dielectrics for CMOS Technology by Gang He, Zhaoqi Sun PDF

By Gang He, Zhaoqi Sun

A state of the art assessment of high-k dielectric fabrics for complex field-effect transistors, from either a primary and a technological point of view, summarizing the most recent learn effects and improvement strategies.
As such, the ebook in actual fact discusses the benefits of those fabrics over traditional fabrics and likewise addresses the problems that accompany their integration into present creation applied sciences. issues lined comprise downscaling limits of present transistor designs, deposition thoughts for high-k dielectric fabrics, electric characterization of the ensuing units, and an outlook in the direction of destiny transistor stacking technology.
geared toward academia and alike, this monograph combines introductory components for newbies to the sphere in addition to complex sections with without delay acceptable suggestions for knowledgeable researchers and builders in fabrics technological know-how, physics and electric engineering.

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Extra info for High-k Gate Dielectrics for CMOS Technology

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IEDM Technical Digest, 2005, p. 438. , and Bersuker, G. (2005) Transient charging and relaxation in high-k gate dielectrics and their implications. Jpn. J. Appl. , 44, 2415. H. (2005) Charge trapping and detrapping characteristics in hafnium silicate gate dielectric using an inversion pulse measurement technique. Appl. Phys. , 87, 122901. , and Bersuker, G. (2005) Effects of ALD HfO2 thickness on charge trapping and mobility. Microelectron. , 80, 218. G. (2006) Nucleation and growth study of atomic layer deposited HfO2 gate dielectrics resulting in improved scaling and electron mobility.

Electron. , 43, 1233. , and King-Smith, D. (1998) Evaluating the minimum thickness of gate oxide on silicon using first-principles method. Appl. Surf. , 135, 137. , and Terakura, K. (1999) Structure and electronic property of Si 26 j 1 Scaling and Limitation of Si-based CMOS 22 23 24 25 26 27 28 29 30 31 32 (100)/SiO2 interface. Microelectron. , 48, 117. , and Greene, W. (1998) Boron diffusion and penetration in ultrathin oxide with poly-Si gate. IEEE Electron. , 19, 291. S. G. (1994) Suppression of interface state generation in reoxidized nitrided oxide gate dielectrics.

In their work, the local energy gap was given by the separation between the highest occupied and lowest unoccupied states. They found that three to four monolayers of SiO2 were needed to ensure that at least one monolayer maintained a fully bulk-like bonding environment, giving rise to the wide, insulating bandgap of SiO2. Since the first and the last monolayers form interfaces with Si and poly-Si, respectively, they have bonding arrangements intermediate to those of bulk Si and bulk SiO2 and hence have energy gaps smaller than that of bulk SiO2.

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