By Pierre-Camille Lacaze, Jean-Claude Lacroix
Written for scientists, researchers, and engineers, Non-volatile Memories describes the hot examine and implementations relating to the layout of a brand new new release of non-volatile digital thoughts. the target is to switch current stories (DRAM, SRAM, EEPROM, Flash, etc.) with a common reminiscence version more likely to achieve larger performances than the present varieties of reminiscence: tremendous excessive commutation speeds, excessive implantation densities and retention time of knowledge of approximately ten years.
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Extra resources for Non-volatile Memories
1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor) Though very old in its principle, the thin film MOSFET structure was first developed in the 1960s at the Bell Labs. The transistor includes an n- or p-doped (generally silicon) semiconductor (SC) and three or four electrodes used as electrical contacts. Two contacts, source (S) and drain (D), implanted into the SC, define a conduction channel (length (L) and width (W)). 1). 1. a) Cross-section of an n-type MOSFET.
A considerable advantage compared to DRAMs is that the charge stored in the floating gate can be preserved over very long times (10 years approximately), and also, in contrast to DRAMs, the read process does not destroy the charge stored in the gate. 1. 5). 5. MOSFET with a floating gate (FG). Metallic deposits are in dark gray and insulating layers (metal oxide) that surround FG are in white The charge stored in the floating gate acts as an electrostatic screen for the control gate CG and, consequently, shifts the operating threshold VTh of the transistor.
Charging the floating gate at different levels induces a shift in the operating threshold VTh of the MOSFET, thus opening a read window between the ‘1’ and ‘0’ states, corresponding to the charge or lack of charge in the floating gate. A considerable advantage compared to DRAMs is that the charge stored in the floating gate can be preserved over very long times (10 years approximately), and also, in contrast to DRAMs, the read process does not destroy the charge stored in the gate. 1. 5). 5. MOSFET with a floating gate (FG).